Debopriya Dutta received his Ph.D. from the Faculty of Materials Science and Engineering in 2022 from Technion – Israel Institute of Technology under the guidance of Asst. Prof. Elad Koren. During his doctoral studies, the main focus of his research was to utilize ferroelectric modulation in backgated MOSFETs based on two dimensional α-In2Se3 and its associated van der Waals heterostructures (vdwH) to fabricate nano-devices with non-volatile, multimodal optoelectronic states. Having joined the nanotech@surfaces Laboratory at Empa as a postdoc in June 2023, his primary objective is to develop a dry-transfer method in ultra-high vacuum in order to build gate tunable devices based on vdWh which would ultimately allow to have an efficient control on the manipulation of charge and spin states in GNRs.

Surface probe microscopy; gate tunable devices; optoelectronic characterization; van der Waals heterostructures, low-dimensional materials

D. Dutta , S. Mukherjee, M. Uzhansky, E. Koren, Edge-based 2D In₂Se₃-MoS₂ ferroelectric field effect device, ACS Appl. Mater. Interfaces 15, 14, 18505–18515 (2023). DOI: https://doi.org/10.1021/acsami.3c00590

D. Dutta D., S. Mukherjee, M. Uzhansky, E. Koren, Crossfield optoelectronic modulation via inter-coupled ferroelectricity in 2D In₂Se₃, npj 2D Mater Appl 5, 78, (2021). DOI: https://doi.org/10.1038/s41699-021-00261-w

S. Mukherjee, D. Dutta, E. Koren, Monolithic In₂Se₃–In₂O₃ heterojunction for multibit non-volatile memory and logic operations using optoelectronic inputs, npj 2D Mater Appl 6, 37 (2022). DOI: https://doi.org/10.1038/s41699-022-00309-5

S. Mukherjee, D. Dutta, P. Mohapatra, L. Dezanashvili, A. Ismach, E. Koren, Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In₂Se₃, ACS Nano 14, 12, 17543–17553 (2020). DOI: https://doi.org/10.1021/acsnano.0c08146