With high resistance against interdiffusion, electromigration, creep and fatigue, single-crystal films of refractory metals are highly desired for applications in opto- and micro-electronic devices. Their fabrication is nevertheless very challenging, primarily due to their high melting points. Requiring no external thermal input, ion-irradiation presents an alternative route for single-crystal films by converting from their polycrystalline counterparts through irradiation-induced selective grain growth. The incomplete poly- to single-crystal conversion is however a common problem which limits the application of this method. Here we use refractory W thin films, the element with the highest melting point, as a model system. We systematically investigate the influences of film microstructure (texture and grain size) and irradiation temperature (77 K and room temperature) on the evolution of selective grain growth under 4.5 MeV Au+ ion-irradiation. We find that the driving force for selective grain growth can be increased by narrowing the texture spread of the films, refining the grain size and decreasing the irradiation temperature. Following this guidance, a complete conversion of a polycrystalline W film into a single crystal is achieved. This study therefore provides insights into the mechanism of selective grain growth and proves that it is an effective technique for microstructure engineering in thin film materials. The concepts can be applied to all crystalline metal films.

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